US PATENT SUBCLASS 257 / 482
.~.~ Microwave transit time device (e.g., IMPATT diode)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

471  DF  SCHOTTKY BARRIER {8}
481  DF  .~ Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts) {1}
482.~.~ Microwave transit time device (e.g., IMPATT diode)

DEFINITION

Classification: 257/482

Microwave transit time device (e.g., IMPATT diode):

(under subclass 481) Subject matter wherein the avalanche breakdown provides a power oscillation in the microwave region.