US PATENT SUBCLASS 257 / 497
PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

497PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE) {1}
498  DF  .~> Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "bipolar SIT" devices)

DEFINITION

Classification: 257/497

PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE):

(under the class definition) Subject matter having at least one active pn, Schottky barrier, or other rectifying junction which can be reverse biased to produce a depletion layer, the active junction being spaced from a second junction by a layer of semiconductor material in which the depletion region extending from the active junction is produced, the second junction being one capable of supplying minority carriers to the layer of semiconductor material upon forward bias of the second junction, and in which the second junction is located sufficiently close to the active junction that the depletion region from the active junction can reach the second junction, thereby forward biasing the second junction and causing the injection of minority carriers therefrom which traverse the depletion layer and reach the active junction.

SEE OR SEARCH THIS CLASS, SUBCLASS:

361+, for punchthrough structure elements used to protect against overvoltage gate insulator breakdown of insulated gate devices.