US PATENT SUBCLASS 257 / 498-- .~ Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "bipolar SIT" devices)

US PATENT SUBCLASS 257 / 498
.~ Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "bipolar SIT" devices)

Current as of: June, 1999
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257 /	HD	ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

497	DF	PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE) {1}
498		.~ Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "bipolar SIT" devices)

DEFINITION

Classification: 257/498

Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "Bipolar SIT" devices):

(under subclass 497) Subject matter wherein the active junction and the second junction are sufficiently closely spaced that the depletion region from the active junction due to the built-in potential of the active junction reaches the second junction even in the absence of a reverse bias voltage across the active junction.