US PATENT SUBCLASS 257 / 44
WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

44WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE {3}
45  DF  .~> Elongated alloyed region (e.g., thermal gradient zone melting, TGZM)
46  DF  .~> In pn junction tunnel diode (Esaki diode)
47  DF  .~> In bipolar transistor structure

DEFINITION

Classification: 257/44

WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE:

(under subclass 107) Subject matter under the class definition wherein the active solid-state device has a pn junction formed by alloying one or more impurity metal contacts to an elemental semiconductor, and wherein the active solid-state device is not a regenerative device of this class.

(1) Note. The impurity metal contact alloys with a semiconductor material to form a p-region or n-region, depending on the impurity used.