US PATENT SUBCLASS 257 / 183
HETEROJUNCTION DEVICE

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

183HETEROJUNCTION DEVICE {10}
183.1  DF  .~> Charge transfer device
184  DF  .~> Light responsive structure {4}
190  DF  .~> With lattice constant mismatch (e.g., with buffer layer to accomodate mismatch)
191  DF  .~> Having graded composition
192  DF  .~> Field effect transistor {1}
196  DF  .~> Both semiconductors of the heterojunction are the same conductivity type (i.e., either N or P)
197  DF  .~> Bipolar transistor {1}
199  DF  .~> Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes)
200  DF  .~> Heterojunction formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., Ge (group IV) - GaAs (group III-V) or InP (group III-V) - CdTe (group II-VI))
201  DF  .~> Between different group IV-VI or II-VI or III-V compounds other than GaAs/GaAlAs

DEFINITION

Classification: 257/183

HETEROJUNCTION DEVICE:

(under the class definition) Subject matter wherein the active solid-state device contains a heterojunction, i.e., a boundary between different regions, one of which is made of a material that differs from that of the other region.

(1) Note. See illustration, below, for an example of a heterojunction bipolar transistor. [figure]

SEE OR SEARCH THIS CLASS, SUBCLASS:

10, and 11, for a heterojunction involving a low workfunction layer for electron emission.

12, through 27, for heterojunction devices which involve quantum well, superlattice or ballistic (hot carrier) transport devices.

51, for a non-single crystal material/monocrystal heterojunction device.

85, for a light emitting structure device combined with a light responsive device in an integrated structure wherein the light responsive device has a heterojunction. 90, for plural light emitting heterojunction devices.

94, through 97, for heterojunction light emitter structures.

193, for a heterojunction charge transfer device.

SEE OR SEARCH CLASS

372, Coherent Light Generators,

43, 50 for semiconductor lasers which may contain heterojunctions.