(under subclass 183) Subject matter in which storage sites for packets of electric charge are induced at or below the surface of the active solid-state (semiconductor) device by an electric field applied to the device and wherein carrier potential energy per unit charge minima is established at a given storage site and such minima is transferred to one or more adjacent storage sites in a serial manner and which contains a junction between two semiconductor materials of different chemical compositions each different composition having a different carrier affinity.
(1) Note. Typically, heterojunctions are between materials which additionally have different band gaps, but that is not true of all heterojunctions.
SEE OR SEARCH THIS CLASS, SUBCLASS:
215, for charge transfer devices which do not involve heterojunctions.
