US PATENT SUBCLASS 257 / 199
.~ Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes)

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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

183  DF  HETEROJUNCTION DEVICE {10}
199.~ Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes)

DEFINITION

Classification: 257/199

Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes):

(under subclass 183) Subject matter wherein the heterojunction device is a diode in which conduction under reverse bias conditions is caused by avalanche breakdown at an applied voltage greater than 6 volts.

(1) Note. One example of such a device is a microwave transit time device (e.g., IMPATT diode).

SEE OR SEARCH THIS CLASS, SUBCLASS:

481, for a Schottky barrier avalanche diode.

551, for an avalanche diode used as a voltage reference element combined with pn junction isolation means in an integrated circuit.

603, through 606, for avalanche diodes not classified above those subclasses in this schedule, i.e., not involving a heterojunction in a non-charge transfer device, or a Schottky barrier, or one used as a voltage reference element with pn junction isolation means in an integrated circuit.

SEE OR SEARCH CLASS 331, Oscillators,

107+, for solid-state active element oscillators.