US PATENT SUBCLASS 257 / 192
.~ Field effect transistor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

183  DF  HETEROJUNCTION DEVICE {10}
192.~ Field effect transistor {1}
194  DF  .~.~> Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT) {1}

DEFINITION

Classification: 257/192

Field effect transistor:

(under subclass 183) Subject matter wherein the heterojunction is part of a field effect transistor, i.e., wherein the current through the active heterojunction is controlled by a voltage applied between gate and source terminals of the device.