US PATENT SUBCLASS 257 / 194
.~.~ Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

183  DF  HETEROJUNCTION DEVICE {10}
192  DF  .~ Field effect transistor {1}
194.~.~ Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT) {1}
195  DF  .~.~.~> Combined with diverse type device

DEFINITION

Classification: 257/194

Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT)):

(under subclass 192) Subject matter wherein the heterojunction field effect transistor has impurity dopant on the side of the heterojunction with lower affinity for the charge carriers (holes or electrons) supplied by the dopant, so that the charge carriers spill over the heterojunction into the side with higher carrier affinity.

(1) Note. Typically, the spilled over charge carriers constitute the conductive channel connecting the source and drain electrodes.

(2) Note. Such devices may be provided with a channel layer of semiconductor material other than group III-V compound semiconductor (e.g., IV-VI compound semiconductor, germanium semiconductor, etc.).

SEE OR SEARCH THIS CLASS, SUBCLASS:

12, through 27, for other closely related quantum well and ballistic transport field effect devices.