US PATENT SUBCLASS 257 / 195
.~.~.~ Combined with diverse type device

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

183  DF  HETEROJUNCTION DEVICE {10}
192  DF  .~ Field effect transistor {1}
194  DF  .~.~ Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT) {1}
195.~.~.~ Combined with diverse type device

DEFINITION

Classification: 257/195

Combined with diverse type device:

(under subclass 194) Subject matter wherein the heterojunction field effect transistor with impurity dopant on the side of the heterojunction with lower affinity for the charge carriers supplied by the dopant is combined with another electronic device.

(1) Note. Typical diverse devises include complementary field effect transistors, i.e., a field effect transistor of opposite conductivity type to the heterojunction field effect transistor; and field effect transistors of different threshold voltages (e.g., enhancement and depletion HEMTs in same integrated circuit).