US PATENT SUBCLASS 257 / 190
.~ With lattice constant mismatch (e.g., with buffer layer to accomodate mismatch)


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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

183  DF  HETEROJUNCTION DEVICE {10}
190.~ With lattice constant mismatch (e.g., with buffer layer to accomodate mismatch)


DEFINITION

Classification: 257/190

With lattice constant mismatch (e.g., with buffer layer to accommodate mismatch):

(under subclass 183) Subject matter wherein at least one of the materials that form the heterojunction has a crystalline lattice constant which is made to differ from the lattice constant of the other material which forms the heterojunction.

(1) Note. Typically, lattice mismatches are sought to be avoided. However, sometimes they are desired, as for example, when the resulting strain favorably affects the properties of the strained semiconductor.

(2) Note. A buffer layer may be provided to accommodate a lattice mismatch, i.e., a layer of material which mechanically separates the layers which have different lattice constants.

SEE OR SEARCH THIS CLASS, SUBCLASS:

18, for strained layer heterojunctions in a superlattice.