US PATENT SUBCLASS 257 / 197
.~ Bipolar transistor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

183  DF  HETEROJUNCTION DEVICE {10}
197.~ Bipolar transistor {1}
198  DF  .~.~> Wide band gap emitter

DEFINITION

Classification: 257/197

Bipolar transistor:

(under subclass 183) Subject matter wherein the heterojunction is part of a bipolar transistor, i.e., a transistor structure whose working current passes through semiconductor material of both polarities (p and n) which form a heterojunction portion of the transistor.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process, particularly

312+, for methods of forming a heterojunction bipolar transistor.