US PATENT SUBCLASS 257 / 1
BULK EFFECT DEVICE


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

1BULK EFFECT DEVICE {2}
2  DF  .~> Bulk effect switching in amorphous material {3}
6  DF  .~> Intervalley transfer (e.g., Gunn effect) {2}


DEFINITION

Classification: 257/1

BULK EFFECT DEVICE:

(under the class definition) Subject matter in which the active device is made up of a semiconductor material whose electrical characteristics are due to the electronic properties of the semiconductor material, which are exhibited throughout the entire body of material rather than in just a localized region thereof (e.g., the surface).

(1) Note. Excluded from this subclass are semiconductive devices whose nonlinear characteristic is due to a junction rather than to the bulk properties of the semiconductor, whether they are homojunctions (i.e., made up of the same semiconductor material with different dopant ions on opposite sides of a junction) or heterojunctions (i.e., made up of different materials on either side of a junction).

SEE OR SEARCH THIS CLASS, SUBCLASS:

289, for insulated electrode devices having significant semiconductor compound in bulk crystal.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process,

900, for methods of making a bulk effect semiconductor device.