US PATENT SUBCLASS 257 / 2
.~ Bulk effect switching in amorphous material

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

1  DF  BULK EFFECT DEVICE {2}
2.~ Bulk effect switching in amorphous material {3}
3  DF  .~.~> With means to localize region of conduction (e.g., "pore" structure)
4  DF  .~.~> With specified electrode composition or configuration
5  DF  .~.~> In array

DEFINITION

Classification: 257/2

Bulk effect switching in amorphous material:

(under subclass 1) Subject matter wherein the bulk material is an amorphous material, i.e., one in which active solid material is non-crystalline in the sense that (1) there is either complete disorder in the arrangement of atoms/mole or molecules of the material or (2) there is an absence of any long range structural order that is detectable by electron or X-ray diffraction patterns of the material and the device is used as an electronic switch.