US PATENT SUBCLASS 257 / 3
.~.~ With means to localize region of conduction (e.g., "pore" structure)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

1  DF  BULK EFFECT DEVICE {2}
2  DF  .~ Bulk effect switching in amorphous material {3}
3.~.~ With means to localize region of conduction (e.g., "pore" structure)

DEFINITION

Classification: 257/3

With means to localize region of conduction (e.g., "pore" structure):

(under subclass 2) Subject matter wherein means (e.g., a porous structure) is provided to confine the operating

current to a particular region of the bulk effect amorphous material.