US PATENT SUBCLASS 257 / 6
.~ Intervalley transfer (e.g., Gunn effect)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

1  DF  BULK EFFECT DEVICE {2}
6.~ Intervalley transfer (e.g., Gunn effect) {2}
7  DF  .~.~> In monolithic integrated circuit
8  DF  .~.~> Three or more terminal device

DEFINITION

Classification: 257/6

Intervalley transfer (e.g., Gunn effect):

(under subclass 1) Subject matter wherein electrons under the influence of sufficiently high electric fields are transferred between energy minima having different momentum in the conduction band of the active semiconductor material, or holes under the influence of sufficiently high electric fields are transferred between energy minima having different momentum in the valence band of the active semiconductor material.

SEE OR SEARCH CLASS

331, Oscillators,

107, for Gunn-type bulk effect device oscillators.

341, Coded Data Generation or Conversion,

133, for analog to or from digital conversion with particular solid-state devices (e.g., Gunn effect devices).

365, Static Information Storage and Retrieval,

169, for systems using a Gunn effect device.