US PATENT SUBCLASS 257 / 929-- PN JUNCTION ISOLATED INTEGRATED CIRCUIT WITH ISOLATION WALLS HAVING MINIMUM DOPANT CONCENTRATION AT INTERMEDIATE DEPTH IN EPITAXIAL LAYER (E.G., DIFFUSED FROM BOTH SURFACES OF EPITAXIAL LAYER)

US PATENT SUBCLASS 257 / 929
PN JUNCTION ISOLATED INTEGRATED CIRCUIT WITH ISOLATION WALLS HAVING MINIMUM DOPANT CONCENTRATION AT INTERMEDIATE DEPTH IN EPITAXIAL LAYER (E.G., DIFFUSED FROM BOTH SURFACES OF EPITAXIAL LAYER)

Current as of: June, 1999
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257 /	HD	ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

929		PN JUNCTION ISOLATED INTEGRATED CIRCUIT WITH ISOLATION WALLS HAVING MINIMUM DOPANT CONCENTRATION AT INTERMEDIATE DEPTH IN EPITAXIAL LAYER (E.G., DIFFUSED FROM BOTH SURFACES OF EPITAXIAL LAYER)

DEFINITION

Classification: 257/929

PN JUNCTION ISOLATED INTEGRATED CIRCUIT WITH ISOLATION WALLS HAVING MINIMUM DOPANT CONCENTRATION AT INTERMEDIATE DEPTH IN EPITAXIAL LAYER (E.G., DIFFUSED FROM BOTH SURFACES OF EPITAXIAL LAYER):

Subject matter comprising an integrated circuit with pn junction isolation and having boundary walls isolating the integrated circuit from its substrate, wherein the walls have a minimum concentration of dopant at an intermediate depth in an epitaxial layer substrate (e.g., diffused from both surfaces of an epitaxial layer).