US PATENT SUBCLASS 257 / 565
BIPOLAR TRANSISTOR STRUCTURE

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565BIPOLAR TRANSISTOR STRUCTURE {11}
566  DF  .~> Plural non-isolated transistor structures in same structure {2}
577  DF  .~> Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.)
578  DF  .~> With enlarged emitter area (e.g., power device) {4}
585  DF  .~> With means to increase inverse gain
586  DF  .~> With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.)
587  DF  .~> With specified electrode means {1}
589  DF  .~> Avalanche transistor
590  DF  .~> With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage)
591  DF  .~> With emitter region having specified doping concentration profile (e.g., high-low concentration step)
592  DF  .~> With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base))
593  DF  .~> With means to increase current gain or operating frequency

DEFINITION

Classification: 257/565

BIPOLAR TRANSISTOR STRUCTURE:

(under the class definition) Subject matter wherein the active solid-state device comprises at least one bipolar transistor.

SEE OR SEARCH THIS CLASS, SUBCLASS:

47, for bipolar transistor structure having a metal contact alloyed to elemental semiconductor type pn junction in a non-regenerative structure.

511, for complementary bipolar transistor structure having dielectric-in-groove isolation and pn junction isolation in an integrated circuit.

517, and 518, for bipolar transistor structure having dielectric-in-groove isolation and pn junction isolation in an integrated circuit.

525, for complementary bipolar structure with full dielectric isolation in an integrated circuit.

526, for bipolar structure with full dielectric isolation in an integrated circuit. 552, through 556, for bipolar transistor structure combined with pn junction isolation in an integrated circuit.

557, through 562, for integrated circuits with electrically isolated lateral bipolar transistor structure.

SEE OR SEARCH CLASS

148, Metal Treatment, digests 10 and 11 for bipolar transistor devices.

326, Electronic Digital Logic Circuitry, particularly

18+, 42+, 48, 75+, 89+, 109+, and 124+ for logic circuits utilizing bipolar transistors.

327, Miscellaneous Active Electrical Nonlinear Devices, Circuits, and Systems, particularly

204, 207, 405, 411+, 417, 432+, 439, 459, 462, 463, 474, 475, and 478+ for miscellaneous nonlinear circuits with explicitly recited bipolar transistors.

330, Amplifiers,

250+, for amplifiers with transistors which may be bipolar transistors and subclass 300 which explicitly provides for bipolar or field effect transistors.

341, Coded Data Generation or Conversion, 127+, for bipolar analog to or from digital converters and subclass 133 for such device with a drift (graded base) transistor element.

438, Semiconductor Device Manufacturing: Process,

309+, for methods of forming bipolar transistors.