US PATENT SUBCLASS 257 / 566
.~ Plural non-isolated transistor structures in same structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
566.~ Plural non-isolated transistor structures in same structure {2}
567  DF  .~.~> Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) {6}
574  DF  .~.~> Complementary transistors share common active region (e.g., integrated injection logic I2L) {1}

DEFINITION

Classification: 257/566

Plural non-isolated transistor structures in same structure:

(under subclass 565) Subject matter wherein the bipolar structure includes more than one bipolar transistor in a structure without electrical isolation between transistors.

(1) Note. See subclass 499, above, for integrated circuits with electrical isolation, including with bipolar transistors.