US PATENT SUBCLASS 257 / 574
.~.~ Complementary transistors share common active region (e.g., integrated injection logic I2L)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
566  DF  .~ Plural non-isolated transistor structures in same structure {2}
574.~.~ Complementary transistors share common active region (e.g., integrated injection logic I2L) {1}
575  DF  .~.~.~> Including lateral bipolar transistor structure {1}

DEFINITION

Classification: 257/574

Complementary transistors share common active region (e.g., integrated injection logic, I[supscrpt]2[end supscrpt]L):

(under subclass 566) Subject matter wherein the device includes complementary transistors (i.e., bipolar transistors of different conductivity types) which share a common active

region (e.g., integrated injection logic, I[supscrpt]2[end supscrpt]L).