US PATENT SUBCLASS 257 / 575
.~.~.~ Including lateral bipolar transistor structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
566  DF  .~ Plural non-isolated transistor structures in same structure {2}
574  DF  .~.~ Complementary transistors share common active region (e.g., integrated injection logic I2L) {1}
575.~.~.~ Including lateral bipolar transistor structure {1}
576  DF  .~.~.~.~> With contacts of refractory material (e.g., polysilicon, silicide of refractory or platinum group metal)

DEFINITION

Classification: 257/575

Including lateral bipolar transistor structure:

(under subclass 574) Subject matter wherein at least one of the complementary bipolar transistors sharing a common region is a lateral bipolar transistor (i.e., has current flow between its emitter and collector parallel to a major surface of the semiconductor chip).

SEE OR SEARCH THIS CLASS, SUBCLASS:

423, for lateral and other bipolar transistor magnetic field responsive structure.

557+, for electrically isolated lateral bipolar transistor structures in an integrated circuit.