US PATENT SUBCLASS 257 / 576
.~.~.~.~ With contacts of refractory material (e.g., polysilicon, silicide of refractory or platinum group metal)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
566  DF  .~ Plural non-isolated transistor structures in same structure {2}
574  DF  .~.~ Complementary transistors share common active region (e.g., integrated injection logic I2L) {1}
575  DF  .~.~.~ Including lateral bipolar transistor structure {1}
576.~.~.~.~ With contacts of refractory material (e.g., polysilicon, silicide of refractory or platinum group metal)

DEFINITION

Classification: 257/576

With contacts of refractory material (e.g., polysilicon, silicide of refractory or platinum group metal):

(under subclass 575) Subject matter wherein the device has electrical contacts which are made of a refractory material (e.g., polysilicon, or a silicide of a metal found in groups IVA, VA, VIA or VIIIA (other than iron (Fe) nickel (Ni) or cobalt (Co)) of the periodic table of the elements.