US PATENT SUBCLASS 257 / 567
.~.~ Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
566  DF  .~ Plural non-isolated transistor structures in same structure {2}
567.~.~ Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) {6}
568  DF  .~.~.~> More than two Darlington-connected transistors
569  DF  .~.~.~> Complementary Darlington-connected transistors
570  DF  .~.~.~> With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.)
571  DF  .~.~.~> Non-planar structure (e.g., mesa emitter, or having a groove to define resistor)
572  DF  .~.~.~> With resistance means connected between transistor base regions
573  DF  .~.~.~> With housing or contact structure or configuration

DEFINITION

Classification: 257/567

Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor):

(under subclass 566) Subject matter wherein the plural non-electrically isolated transistor structures are arranged in a Darlington configuration (i.e., wherein the emitter to collector current of an input transistor is supplied to the base region of an output transistor).