US PATENT SUBCLASS 257 / 569
.~.~.~ Complementary Darlington-connected transistors

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
566  DF  .~ Plural non-isolated transistor structures in same structure {2}
567  DF  .~.~ Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) {6}
569.~.~.~ Complementary Darlington-connected transistors

DEFINITION

Classification: 257/569

Complementary Darlington-connected transistors:

(under subclass 567) Subject matter wherein the Darlington configuration comprises two bipolar transistors which have a complementary connection, i.e., the input transistor is of

one conductivity type (e.g., npn) and the other is of the opposite conductivity type (e.g., pnp).