US PATENT SUBCLASS 257 / 572
.~.~.~ With resistance means connected between transistor base regions


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
566  DF  .~ Plural non-isolated transistor structures in same structure {2}
567  DF  .~.~ Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) {6}
572.~.~.~ With resistance means connected between transistor base regions


DEFINITION

Classification: 257/572

With resistance means connected between transistor base regions:

(under subclass 567) Subject matter wherein the device includes a resistor element structure connecting the base regions of the Darlington bipolar transistors.