US PATENT SUBCLASS 257 / 570
.~.~.~ With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
566  DF  .~ Plural non-isolated transistor structures in same structure {2}
567  DF  .~.~ Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) {6}
570.~.~.~ With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.)

DEFINITION

Classification: 257/570

With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.):

(under subclass 567) Subject matter wherein the device contains active solid-state devices in addition to Darlington bipolar transistors.