US PATENT SUBCLASS 257 / 591
.~ With emitter region having specified doping concentration profile (e.g., high-low concentration step)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
591.~ With emitter region having specified doping concentration profile (e.g., high-low concentration step)

DEFINITION

Classification: 257/591

With emitter region having specified doping concentration profile (e.g., high-low concentration step):

(under subclass 565) Subject matter wherein the device has an emitter region with a specified impurity dopant concentration profile (e.g., a specified concentration gradient across the emitter region).