US PATENT SUBCLASS 257 / 592
.~ With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base))

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
592.~ With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base))

DEFINITION

Classification: 257/592

With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base)):

(under subclass 565) Subject matter wherein the device has a base region with a cross section that has a specified impurity dopant concentration across it or has a particular geometric configuration.