US PATENT SUBCLASS 257 / 590
.~ With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
590.~ With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage)

DEFINITION

Classification: 257/590

With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage):

(under subclass 565) Subject matter wherein the device has means to reduce the minority carrier lifetime, i.e., before recombination with a majority carrier, by, for example, a region of deep level dopant or a region of damage to the semiconductor crystal.