US PATENT SUBCLASS 257 / 578
.~ With enlarged emitter area (e.g., power device)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
578.~ With enlarged emitter area (e.g., power device) {4}
579  DF  .~.~> With separate emitter areas connected in parallel {1}
582  DF  .~.~> With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors)
583  DF  .~.~> With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown)
584  DF  .~.~> With housing or contact (i.e., electrode) means

DEFINITION

Classification: 257/578

With enlarged emitter area (e.g., power device):

(under subclass 565) Subject matter wherein the device has relatively enlarged emitter cross-sectional areas (e.g.,

power devices).