257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
565 | DF | BIPOLAR TRANSISTOR STRUCTURE {11} |
578 | DF | .~ With enlarged emitter area (e.g., power device) {4} |
579 | ![]() | .~.~ With separate emitter areas connected in parallel {1} |
580 | DF | .~.~.~> With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means) {1} |