US PATENT SUBCLASS 257 / 579
.~.~ With separate emitter areas connected in parallel

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
578  DF  .~ With enlarged emitter area (e.g., power device) {4}
579.~.~ With separate emitter areas connected in parallel {1}
580  DF  .~.~.~> With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means) {1}

DEFINITION

Classification: 257/579

With separate emitter areas connected in parallel:

(under subclass 578) Subject matter wherein there are a plurality of separate emitter areas which are electrically connected in parallel.