US PATENT SUBCLASS 257 / 580
.~.~.~ With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
578  DF  .~ With enlarged emitter area (e.g., power device) {4}
579  DF  .~.~ With separate emitter areas connected in parallel {1}
580.~.~.~ With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means) {1}
581  DF  .~.~.~.~> Thin film ballasting means (e.g., polysilicon resistor)

DEFINITION

Classification: 257/580

With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means):

(under subclass 579) Subject matter wherein current ballasting means is provided to divide emitter current more evenly between the plurality of separate emitter areas which are electrically interconnected in parallel.

SEE OR SEARCH THIS CLASS, SUBCLASS:

164, for regenerative devices having multiemitter regions which may include emitter ballasting resistors.