US PATENT SUBCLASS 257 / 583
.~.~ With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
578  DF  .~ With enlarged emitter area (e.g., power device) {4}
583.~.~ With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown)

DEFINITION

Classification: 257/583

With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown):

(under subclass 578) Subject matter wherein there are means in selected portions of the transistor to reduce the transistor action in those portions.