US PATENT SUBCLASS 257 / 629
WITH MEANS TO CONTROL SURFACE EFFECTS

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

629WITH MEANS TO CONTROL SURFACE EFFECTS {4}
630  DF  .~> With inversion-preventing shield electrode
631  DF  .~> In compound semiconductor material (e.g., GaAs)
632  DF  .~> Insulating coating {8}
652  DF  .~> Channel stop layer

DEFINITION

Classification: 257/629

WITH MEANS TO CONTROL SURFACE EFFECTS:

(under the class definition) Subject matter wherein the active junction device has means to modify (e.g., reduce, or eliminate) electrical field effects which take place at the device surface or to modify (e.g., reduce or eliminate) inhomogeneities in electrical properties of a semiconductor crystal region due to effects caused by the discontinuity of the crystal lattice at the surface.

(1) Note. Such effects include formation of an inversion layer of minority carriers at the semiconductor surface, or depletion of majority carriers at the semiconductor surface, due to charge in an insulating coating on the surface or due to dangling bonds where the crystal structure of the semiconductor ends at the surface, leakage current via charge flow over a surface rather than through it, etc.

SEE OR SEARCH THIS CLASS, SUBCLASS:

487, for a semiconductor device provided with means to increase breakdown voltage of the device (which may involve surface effects).