(under subclass 629) Subject matter wherein the means to control surface effects comprises a channel stop region (i.e., a region of heavy doping concentration in the underlying semiconductor surface to prevent inversion of the surface by formation of a layer of induced minority carriers).
SEE OR SEARCH THIS CLASS, SUBCLASS:
305, for insulated gate capacitor in trench or insulated gate transistor combined with capacitor in trench with a channel stop.
349, for SOI devices with buried channel stop layer.
354, for SOI devices with channel stop regions in single crystal island edges.
376, and 398 through 400, for IGFET integrated circuit devices with channel stop layers used to prevent parasitic conduction channels.
519, for integrated circuit devices with PN junction and dielectric in groove isolation with heavily doped channel stop region adjacent to groove.
