| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 629 | DF | WITH MEANS TO CONTROL SURFACE EFFECTS {4} |
| 632 |  | .~ Insulating coating {8} |
| 633 | DF | .~.~> With thermal expansion compensation (e.g., thermal expansion of glass passivant matched to that of semiconductor) |
| 634 | DF | .~.~> Insulating coating of glass composition containing component to adjust melting or softening temperature (e.g., low melting point glass) |
| 635 | DF | .~.~> Multiple layers {8} |
| 646 | DF | .~.~> Coating of semi-insulating material (e.g., amorphous silicon or silicon-rich silicon oxide) |
| 647 | DF | .~.~> Insulating layer recessed into semiconductor surface (e.g., LOCOS oxide) {1} |
| 649 | DF | .~.~> Insulating layer of silicon nitride or silicon oxynitride |
| 650 | DF | .~.~> Insulating layer of glass |
| 651 | DF | .~.~> Details of insulating layer electrical charge (e.g., negative insulator layer charge) |