| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 629 | DF | WITH MEANS TO CONTROL SURFACE EFFECTS {4} |
| 632 | DF | .~ Insulating coating {8} |
| 635 |  | .~.~ Multiple layers {8} |
| 636 | DF | .~.~.~> At least one layer of semi-insulating material |
| 637 | DF | .~.~.~> Three or more insulating layers |
| 638 | DF | .~.~.~> With discontinuous or varying thickness layer (e.g., layer covers only selected portions of semiconductor) |
| 639 | DF | .~.~.~> At least one layer of silicon oxynitride |
| 640 | DF | .~.~.~> At least one layer of silicon nitride {1} |
| 642 | DF | .~.~.~> At least one layer of organic material {1} |
| 644 | DF | .~.~.~> At least one layer of glass |
| 645 | DF | .~.~.~> Insulating layer containing specified electrical charge (e.g., net negative electrical charge) |