US PATENT SUBCLASS 257 / 639
.~.~.~ At least one layer of silicon oxynitride

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

629  DF  WITH MEANS TO CONTROL SURFACE EFFECTS {4}
632  DF  .~ Insulating coating {8}
635  DF  .~.~ Multiple layers {8}
639.~.~.~ At least one layer of silicon oxynitride

DEFINITION

Classification: 257/639

At least one layer of silicon oxynitride:

(under subclass 635) Subject matter wherein at least one of the multiple insulating layers is made of a mixture of the oxides and nitrides of silicon.