US PATENT SUBCLASS 257 / 640
.~.~.~ At least one layer of silicon nitride

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

629  DF  WITH MEANS TO CONTROL SURFACE EFFECTS {4}
632  DF  .~ Insulating coating {8}
635  DF  .~.~ Multiple layers {8}
640.~.~.~ At least one layer of silicon nitride {1}
641  DF  .~.~.~.~> Combined with glass layer

DEFINITION

Classification: 257/640

At least one layer of silicon nitride:

(under subclass 635) Subject matter wherein there is at least one layer of silicon nitride in the multiple insulating layers on the semiconductor body.