US PATENT SUBCLASS 257 / 649
.~.~ Insulating layer of silicon nitride or silicon oxynitride

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

629  DF  WITH MEANS TO CONTROL SURFACE EFFECTS {4}
632  DF  .~ Insulating coating {8}
649.~.~ Insulating layer of silicon nitride or silicon oxynitride

DEFINITION

Classification: 257/649

Insulating layer of silicon nitride or silicon oxynitride:

(under subclass 632) Subject matter wherein the insulating layer is composed of silicon nitride or of a mixture of

silicon oxide and silicon nitride.