US PATENT SUBCLASS 257 / 916
NARROW BAND GAP SEMICONDUCTOR MATERIAL (<< 1eV)


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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

916NARROW BAND GAP SEMICONDUCTOR MATERIAL (<< 1eV)


DEFINITION

Classification: 257/916

NARROW BAND GAP SEMICONDUCTOR MATERIAL (<<1eV):

Subject matter wherein an active solid-state device material is a semiconductor in which the difference between the energy levels of electrons bound to their nuclei (valence electrons) and the energy levels that allow electrons to migrate freely (conduction electrons) is less than one electron volt.