US PATENT SUBCLASS 257 / 927
DIFFERENT DOPING LEVELS IN DIFFERENT PARTS OF PN JUNCTION TO PRODUCE SHAPED DEPLETION LAYER

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

927DIFFERENT DOPING LEVELS IN DIFFERENT PARTS OF PN JUNCTION TO PRODUCE SHAPED DEPLETION LAYER

DEFINITION

Classification: 257/927

DIFFERENT DOPING LEVELS IN DIFFERENT PARTS OF PN JUNCTION TO PRODUCE SHAPED DEPLETION LAYER:

Subject matter wherein a pn junction device contains impurity dopants with differing concentrations of dopant in different parts of the PN junction such that a depletion region

associated with the PN junction has a controlled shape.