US PATENT SUBCLASS 257 / 213
FIELD EFFECT DEVICE

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213FIELD EFFECT DEVICE {6}
214  DF  .~> Charge injection device
215  DF  .~> Charge transfer device {11}
252  DF  .~> Responsive to non-optical, non-electrical signal {2}
255  DF  .~> With current flow along specified crystal axis (e.g., axis of maximum carrier mobility)
256  DF  .~> Junction field effect transistor (unipolar transistor) {15}
288  DF  .~> Having insulated electrode (e.g., MOSFET, MOS diode) {17}

DEFINITION

Classification: 257/213

FIELD EFFECT DEVICE:

(under the class definition) Subject matter comprising a field effect transistor, in which the density of electrical charge (electrons or holes) in a semiconductor region is controlled by a voltage applied to an adjacent region or electrode which in operation is prevented from conducting direct electrical current to or from the semiconductor region by an insulator or barrier region.

(1) Note. The conduction of current in a field effect device is along a path called a channel.

(2) Note. See Illustration, below, for various types of field effect devices. [figure]

SEE OR SEARCH CLASS

331, Oscillators,

116, and 117 for field effect transistor oscillator active elements.

341, Coded Data Generation or Conversion,

136, for analog to or from digital conversion devices with a field effect transistor.