257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
213 | DF | FIELD EFFECT DEVICE {6} |
215 | | .~ Charge transfer device {11} |
216 | DF | .~.~> Majority signal carrier (e.g., buried or bulk channel, or peristaltic) {5} |
225 | DF | .~.~> Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) {6} |
235 | DF | .~.~> Electrical input {2} |
239 | DF | .~.~> Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output) |
240 | DF | .~.~> Changing width or direction of channel (e.g., meandering channel) |
241 | DF | .~.~> Multiple channels (e.g., converging or diverging or parallel channels) |
242 | DF | .~.~> Vertical charge transfer |
243 | DF | .~.~> Channel confinement |
244 | DF | .~.~> Comprising a groove |
245 | DF | .~.~> Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) {2} |
251 | DF | .~.~> Substantially incomplete signal charge transfer (e.g., bucket brigade) |