(under subclass 215) Subject matter containing means (e.g., pn junctions or dielectric layers) to restrict the boundaries of the charge transfer path through the device.
(1) Note. Typical channel confinement means include use of (a) an electrically insulating medium; (b) a layer of silicon polymer material (polysilicon) used to reduce electric field interaction with charge to be transferred via the channel; or (c) an impurity ion located in the device substrate, i.e., in the material on which the device is fabricated (e.g., an implanted channel stop).
