US PATENT SUBCLASS 257 / 245
.~.~ Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
245.~.~ Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) {2}
246  DF  .~.~.~> Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit") {2}
249  DF  .~.~.~> Electrode structures or materials {1}

DEFINITION

Classification: 257/245

Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel):

(under subclass 215) Subject matter including structure (e.g., electrodes) for applying electrical energy into the device.

(1) Note. Structure for applying electrical energy into the device is typically an electrode with a relatively high electrical resistance value.