US PATENT SUBCLASS 257 / 246
.~.~.~ Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit")

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
245  DF  .~.~ Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) {2}
246.~.~.~ Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit") {2}
247  DF  .~.~.~.~> Uniphase or virtual phase structure
248  DF  .~.~.~.~> 2-phase

DEFINITION

Classification: 257/246

Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit"):

(under subclass 245) Subject matter including a plurality of gate regions or doping variation regions to permit unidirectional charge packet transfer by symmetrical or unsymmetrically phased electrical control signals applied to the device gate or gates.

(1) Note. The phase structure may be multiphase (e.g., 3-phase or 4-phase), i.e., with three sets or four sets of electrodes, respectively.

(2) Note. Search subclass 249, below, for 2-phase structure devices.

(3) Note. Means may also be provided to generate a traveling wave of non-electrical energy (e.g., acoustic energy) in the device.