US PATENT SUBCLASS 257 / 225
.~.~ Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
225.~.~ Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) {6}
226  DF  .~.~.~> Sensor element and charge transfer device are of different materials or on different substrates (e.g., "hybrid")
227  DF  .~.~.~> With specified dopant (e.g., photoionizable, "extrinsic" detectors for infrared)
228  DF  .~.~.~> Light responsive, back illuminated
229  DF  .~.~.~> Having structure to improve output signal (e.g., exposure control structure) {1}
231  DF  .~.~.~> 2-dimensional area architecture {2}
234  DF  .~.~.~> Single strip of sensors (e.g., linear imager)

DEFINITION

Classification: 257/225

Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.):

(under subclass 215) Subject matter wherein the means that creates charge to be transferred is non-electrical (e.g., light).