US PATENT SUBCLASS 257 / 231
.~.~.~ 2-dimensional area architecture

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
225  DF  .~.~ Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) {6}
231.~.~.~ 2-dimensional area architecture {2}
232  DF  .~.~.~.~> Having alternating strips of sensor structures and register structures (e.g., interline imager)
233  DF  .~.~.~.~> Sensors not overlaid by electrode (e.g., photodiodes)

DEFINITION

Classification: 257/231

2-dimensional area architecture:

(under subclass 225) Subject matter wherein the device has a plurality of non-electrical input responsive means spread out over a two dimensional area, e.g., a matrix or array of such means.

(1) Note. One 2-dimensional architecture area may be provided for light imaging elements and a separate 2-dimensional architecture area may be provided for electrical signal storage elements.

(2) Note. The imaging element sites may also be charge transfer storage sites (e.g., frame transfer imaging device).