US PATENT SUBCLASS 257 / 216
.~.~ Majority signal carrier (e.g., buried or bulk channel, or peristaltic)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
216.~.~ Majority signal carrier (e.g., buried or bulk channel, or peristaltic) {5}
217  DF  .~.~.~> Having a conductive means in direct contact with channel (e.g., non- insulated gate)
218  DF  .~.~.~> High resistivity channel (e.g., accumulation mode) or surface channel (e.g., transfer of signal charge occurs at the surface of the semi-conductor) or minority carriers at input (e.g., surface channel input)
219  DF  .~.~.~> Impurity concentration variation {2}
222  DF  .~.~.~> Responsive to non-electrical external signal (e.g., imager) {1}
224  DF  .~.~.~> Channel confinement

DEFINITION

Classification: 257/216

Majority signal carrier (e.g., buried or bulk channel, or peristaltic):

(under subclass 215) Subject matter wherein the transfer is by majority carriers of the semiconductor material, i.e., by electrons in n-type semiconductor material, and is by holes in p-type semiconductor material.